SK Hynix has announced the development of its 238-layer 4D NAND flash memory, with shipments of 512Gb triple-level cell (TLC) chip samples already kicking off.
SK Hynix expects to enter mass production of 238-layer 512Gb TLC 4D NAND flash chips in the first half of 2023.
The new SK Hynix NAND product, while achieving highest layers of 238, is the smallest NAND in size, meaning its overall productivity has increased by 34% compared with the 176-layer NAND, the company claimed. The data-transfer speed of the 238-layer product is 2.4Gb per second, a 50% increase from the previous generation.
SK Hynix’ 238-layer 512Gb TLC 4D NAND flash will be first adopted for client SSDs which are used as PC storage devices, before being provided for smartphones and high-capacity SSDs for servers later. The company also plans to introduce 238-layer products in one terabit (Tb) next year, with density doubled compared to the current 512Gb product.
SK Hynix unveiled its 238-layer 512Gb TLC 4D NAND flash memory at the Flash Memory Summit 2022 in Santa Clara.
Also at the event, fellow company Kioxia launched its second-generation XL-Flash, a storage-class memory (SCM) solution based on its BiCS Flash 3D flash memory technology. The new XL-Flash will have a memory capacity of 256 gigabits. Sample shipments are scheduled to start in November 2022.
SK Hynix 238-layer 4D NAND flash